DocumentCode
1762509
Title
Influence of Preferred Gate Metal Grain Orientation on Tunneling FETs
Author
Kyoung Min Choi ; Won-Sok Lee ; Keun-Ho Lee ; Young-Kwan Park ; Woo Young Choi
Author_Institution
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
Volume
62
Issue
4
fYear
2015
fDate
42095
Firstpage
1353
Lastpage
1356
Abstract
The novel effects of preferred gate metal grain orientation on tunneling FETs (TFETs) have been investigated for the first time. It has been observed that TFETs have preferred gate metal grain orientation to lower work-function variation (WFV) unlike MOSFETs. In the case of TFETs, when the metal gate grain orientation with low work function is dominant, the WFV is effectively suppressed. This brief provides a design guideline for the suppression of TFET WFV.
Keywords
field effect transistors; semiconductor device models; tunnel transistors; work function; TFET WFV suppression; gate metal grain orientation; tunneling FET; work-function variation; Logic gates; MOSFET; Metals; Semiconductor device modeling; Tunneling; Gate metal grain orientation; preferred orientation; tunneling FETs (TFETs); work-function variation (WFV); work-function variation (WFV).;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2399018
Filename
7059245
Link To Document