Title :
Transformer-Based Doherty Power Amplifiers for mm-Wave Applications in 40-nm CMOS
Author :
Kaymaksut, Ercan ; Dixian Zhao ; Reynaert, Patrick
Author_Institution :
Dept. of Electr. Eng. (ESAT), KU Leuven, Leuven, Belgium
Abstract :
This paper presents a power amplifier (PA) topology to improve the back-off efficiency and the linearity of millimeter-wave (mm-wave) PAs without area overhead. In this paper, an asymmetrical series power combiner with LC tuning circuits is proposed to mimic the Doherty operation. Due to high back-off efficiency and high linearity behavior, the proposed Doherty topology well suits for E-band communication applications. Two transformer-based E-band PAs are designed and measured to demonstrate the proposed mm-wave Doherty concept. The first implementation achieves 16.2-dBm output power with a P1dB of 15.2 dBm using a 0.9-V supply. The second implementation demonstrates 21-dBm output power with a power-added efficiency (PAE) of 13.6% at a 1.5-V supply. The PAE at 6-dB power back-off is still as high as 7%.
Keywords :
CMOS integrated circuits; LC circuits; circuit tuning; field effect MIMIC; high-frequency transformers; millimetre wave power amplifiers; network topology; CMOS; E-band communication applications; LC tuning circuits; asymmetrical series power combiner; back-off efficiency; linearity; mm-wave applications; power amplifier topology; power-added efficiency; size 40 nm; transformer-based Doherty power amplifiers; voltage 0.9 V to 1.5 V; CMOS integrated circuits; Capacitance; Impedance; Power generation; Topology; Transistors; Tuning; Back-off efficiency; CMOS; Doherty power amplifier (PA); millimeter-wave (mm-wave) backhaul;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2015.2409255