Impact of Linewidth on Backend Dielectric TDDB and Incorporation of the Linewidth Effect in Full Chip Lifetime Analysis

Author

Bashir, Muhammad M. ; Milor, Linda

Author_Institution

Intel Corp., Hillsboro, OR, USA

Volume

28

Issue

1

fYear

2015

fDate

Feb. 2015

Firstpage

25

Lastpage

34

Abstract

Low-k time-dependent dielectric breakdown (TDDB) has been found to vary as a function of metal linewidth, when the distance between the lines is constant. Modeling requires determining the relationship between TDDB and layout geometries. Therefore, comb test structures that vary pattern density and linewidth independently have been designed and implemented in 45 nm technology. Models are computed to estimate TDDB as a function of linewidth, and the cause of variation in TDDB behavior is investigated. The methodology to use the models for full-chip analysis is explained.

Keywords

electric breakdown; integrated circuit reliability; low-k dielectric thin films; backend dielectric TDDB; comb test structures; full chip lifetime analysis; full-chip analysis; layout geometries; linewidth effect; low-k time-dependent dielectric break- down; metal linewidth; pattern density; size 45 nm; Computational modeling; Dielectrics; Electric breakdown; Electric fields; Shape; Silicon; Weibull distribution; Dielectric breakdown; integrated circuit reliability;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2014.2383832

Filename

6990606