Title :
Germanium Multiple-Gate Field-Effect Transistor With In Situ Boron-Doped Raised Source/Drain
Author :
Bin Liu ; Chunlei Zhan ; Yue Yang ; Ran Cheng ; Pengfei Guo ; Qian Zhou ; Kong, Eugene Y.-J ; Daval, N. ; Veytizou, C. ; Delprat, D. ; Bich-Yen Nguyen ; Yee-Chia Yeo
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
We report the first demonstration of a p-channel Ω-gate Germanium (Ge) multiple-gate field-effect transistor (MuGFET) on a Germanium-on-Insulator (GeOI) substrate with in situ Boron (B)-doped Ge (Ge:B) raised source/drain (RSD). Detailed process optimization on epitaxial growth of Ge on patterned GeOI samples is discussed. Process integration of Ge:B RSD into Ge MuGFETs using a CMOS compatible process flow is documented. Electrical characteristics of Ge MuGFETs with RSD are reported.
Keywords :
CMOS integrated circuits; boron; epitaxial growth; field effect transistors; germanium; semiconductor doping; semiconductor-insulator boundaries; substrates; CMOS compatible process flow; Ge:B; GeOI substrate; MuGFET; RSD; electrical characteristics; epitaxial growth; germanium-on-insulator; p-channel Ω-gate multiple-gate field-effect transistor; process integration; process optimization; raised source/drain; Germanium (Ge); Germanium-on-Insulator (GeOI); in situ dope; multiple-gate field-effect transistor (MuGFET); raised source/drain (RSD);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2262135
