Germanium Multiple-Gate Field-Effect Transistor With In Situ Boron-Doped Raised Source/Drain

Author

Bin Liu ; Chunlei Zhan ; Yue Yang ; Ran Cheng ; Pengfei Guo ; Qian Zhou ; Kong, Eugene Y.-J ; Daval, N. ; Veytizou, C. ; Delprat, D. ; Bich-Yen Nguyen ; Yee-Chia Yeo

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

Volume

60

Issue

7

fYear

2013

fDate

41456

Firstpage

2135

Lastpage

2141

Abstract

We report the first demonstration of a p-channel Ω-gate Germanium (Ge) multiple-gate field-effect transistor (MuGFET) on a Germanium-on-Insulator (GeOI) substrate with in situ Boron (B)-doped Ge (Ge:B) raised source/drain (RSD). Detailed process optimization on epitaxial growth of Ge on patterned GeOI samples is discussed. Process integration of Ge:B RSD into Ge MuGFETs using a CMOS compatible process flow is documented. Electrical characteristics of Ge MuGFETs with RSD are reported.

Keywords

CMOS integrated circuits; boron; epitaxial growth; field effect transistors; germanium; semiconductor doping; semiconductor-insulator boundaries; substrates; CMOS compatible process flow; Ge:B; GeOI substrate; MuGFET; RSD; electrical characteristics; epitaxial growth; germanium-on-insulator; p-channel Ω-gate multiple-gate field-effect transistor; process integration; process optimization; raised source/drain; Germanium (Ge); Germanium-on-Insulator (GeOI); in situ dope; multiple-gate field-effect transistor (MuGFET); raised source/drain (RSD);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2262135

Filename

6529107