Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor

Based on McKelvey´s flux theory, a carrier transport model for a graphene field-effect transistor (GFET) is addressed. This model leads to an explicit expression for drain-to-source current with only a few fitting parameters. The model is verified with experiments and simulations, and good agreements are observed. With the model, the characteristics of drain-to-source current of the GFET with positive or negative gate biases can be obtained very quickly and easily. The model will provide some insights and guidance for the practical use of the GFETs and can be embedded in circuit simulation tools.