Improvement of Electrical Properties in a Novel Partially Depleted SOI MOSFET With Emphasizing on the Hysteresis Effect

A novel structure is presented to suppress the hysteresis effect due to the floating body effect (FBE) in a partially depleted silicon-on-insulator (SOI) MOSFET. The proposed structure, including a Si_1-xGe_x tunnel diode on the source side, provides a proper path for transferring the accumulated holes in order to diminish the FBE. Indeed, the SiGe tunnel diode can be introduced as a body contact for the proposed structure. The new structure, named the SiGe tunnel diode body contact SOI (SG-TDBC SOI), is compared with a conventional SOI MOSFET (C-SOI) structure. Also, the proposed structure improves other main characteristics such as short channel effects, breakdown voltage, subthreshold swing, gate-induced floating body effect and gate-induced drain leakage. Extracted numerical results show that the SG-TDBC SOI structure can be considered as a candidate to replace the conventional SOI structure.