Device Performance of Heterojunction Tunneling Field-Effect Transistors Based on Transition Metal Dichalcogenide Monolayer

Author

Kai-Tak Lam ; Xi Cao ; Jing Guo

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA

Volume

34

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

1331

Lastpage

1333

Abstract

The ballistic device performances of monolayer transition metal dichalcogenide (MX2) tunneling field-effect transistors (TFETs) and the drive current enhancement via heterojunction are investigated in this letter via the nonequilibrium Green´s function formulism. The ultrathin 2-D body and the direct and designable bandgap by choosing a proper MX2 material are advantageous for the performance of TFETs. Through introducing a common- X heterojunction at the source-channel interface, the I_ON at the same I_ON/I_OFF ratio can be further enhanced by an order for both n- and p-type TFETs.

Keywords

Green´s function methods; high electron mobility transistors; semiconductor device models; TFET; ballistic device; drive current enhancement; heterojunction tunneling field-effect transistors; monolayer transition metal dichalcogenide tunneling field-effect transistors; nonequilibrium Green´s function formulism; transition metal dichalcogenide monolayer; Heterojunctions; Logic gates; Materials; Performance evaluation; Photonic band gap; Transistors; Tunneling; Field-effect transistors (FETs); heterojunctions; nanoelectronics; tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2277918

Filename

6587123