Title :
Device Performance of Heterojunction Tunneling Field-Effect Transistors Based on Transition Metal Dichalcogenide Monolayer
Author :
Kai-Tak Lam ; Xi Cao ; Jing Guo
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
The ballistic device performances of monolayer transition metal dichalcogenide (MX2) tunneling field-effect transistors (TFETs) and the drive current enhancement via heterojunction are investigated in this letter via the nonequilibrium Green´s function formulism. The ultrathin 2-D body and the direct and designable bandgap by choosing a proper MX2 material are advantageous for the performance of TFETs. Through introducing a common- X heterojunction at the source-channel interface, the ION at the same ION/IOFF ratio can be further enhanced by an order for both n- and p-type TFETs.
Keywords :
Green´s function methods; high electron mobility transistors; semiconductor device models; TFET; ballistic device; drive current enhancement; heterojunction tunneling field-effect transistors; monolayer transition metal dichalcogenide tunneling field-effect transistors; nonequilibrium Green´s function formulism; transition metal dichalcogenide monolayer; Heterojunctions; Logic gates; Materials; Performance evaluation; Photonic band gap; Transistors; Tunneling; Field-effect transistors (FETs); heterojunctions; nanoelectronics; tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2277918
