Title :
Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes
Author :
Makino, Tatsuya ; Deki, Manato ; Iwamoto, N. ; Onoda, S. ; Hoshino, Norihiro ; Tsuchida, H. ; Hirao, Takami ; Ohshima, T.
Author_Institution :
Japan Atomic Energy Agency (JAEA), Takasaki, Japan
Abstract :
Heavy-ion induced anomalous charge collection was observed in 4H-SiC Schottky Barrier Diodes (SBDs). It is suggested that the range of the incident ions with respect to the thickness of the epi-layer, ion energy, and electric-field intensity of the SBD is the key to understanding this observation and understanding the SEB mechanism.
Keywords :
Schottky diodes; ion beam effects; silicon compounds; wide band gap semiconductors; Schottky barrier diodes; SiC; electric field intensity; epilayer thickness; heavy ion induced anomalous charge collection; ion energy; Bonding; Charge measurement; Ions; Schottky barriers; Schottky diodes; Silicon; Silicon carbide; Heavy-ion; Schottky Barrier Diode; silicon carbide; single event burnout;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2243469
