Cascaded GaN Light-Emitting Diodes With Hybrid Tunnel Junction Layers

Author

Shoou-Jinn Chang ; Wei-Heng Lin ; Wei-Shou Chen

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

51

Issue

8

fYear

2015

fDate

Aug. 2015

Firstpage

1

Lastpage

5

Abstract

We report the fabrication of cascaded GaN light-emitting diodes (LEDs) with previously reported p⁺⁺-GaN/i-InGaN/n⁺⁺-GaN tunnel junction layers (TJLs) and with hybrid TJL. Compared with the conventional LED, it was found that we could enhance the output power by 35% and 80% from the LED with p⁺⁺-GaN/i-InGaN/n⁺⁺-GaN TJL and the LED with hybrid TJL. It was also found that the TJ resistances were 6.05 × 10^-3 and 1.95 × 10^-3Ω · m² for the LED with p⁺⁺-GaN/i-InGaN/n⁺⁺-GaN TJL and the LED with hybrid TJL, respectively. It was also found that the use of hybrid TJL could result in smaller efficiency droop. These improvements could all be attributed to the larger polarization charges induced at the AlGaN/InGaN interface which could enhance the tunneling current. Furthermore, it was found that the cascaded GaN LEDs with hybrid TJL were also reliable.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical fabrication; p-n junctions; tunnel diodes; tunnelling; wide band gap semiconductors; GaN-InGaN-GaN-AlGaN; cascaded GaN light-emitting diodes; cascaded LED; hybrid tunnel junction layers; output power; polarization; tunneling current; Aluminum gallium nitride; Current measurement; Gallium nitride; Light emitting diodes; Power generation; Quantum well devices; Wide band gap semiconductors; GaN; LEDs; hybrid tunnel junction;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2015.2440757

Filename

7123568