${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels

We report on In_0.53Ga_0.47As n-channel multiple-gate field-effect transistors (MuGFETs or FinFETs) with a novel method of selectively regrown lateral (parallel to substrate) nanowires as channels. The device exhibits a minimum subthreshold slope of 85 mV/decade and drain-induced barrier lowering of 88 mV/V at V_DS=0.05 V and L_G=200 nm. At V_DS=0.5 V, g_m,max=1.67 mS/μm is achieved (L_G=32 nm). The extrapolated cutoff frequency f_T of 210 GHz and the maximum oscillation frequency f_max of 250 GHz are the highest of any reported III-V multiple-gate MOSFET.