DocumentCode :
1763420
Title :
High-Temperature Hardware: Development of a 10-kW High-Temperature, High-Power-Density Three-Phase ac-dc-ac SiC Converter
Author :
Puqi Ning ; Di Zhang ; Rixin Lai ; Dong Jiang ; Wang, F. ; Boroyevich, Dushan ; Burgos, Rolando ; Karimi, Kamyab ; Immanuel, V.D. ; Solodovnik, E.V.
Author_Institution :
Nat. Transp. Res. Center, Oak Ridge Nat. Lab., Knoxville, TN, USA
Volume :
7
Issue :
1
fYear :
2013
fDate :
41334
Firstpage :
6
Lastpage :
17
Abstract :
This article presents the development and experimental performance of a 10-W, all-silicon carbide (SiC), 250 °C junction temperature, high-powerdensity, three-phase ac-dc-ac converter. The electromagnetic interference filter, thermal system, high-temperature package, and gate drive design are discussed in detail. Tests confirming the feasibility and validating the theoretical basis of the prototype converter system are described. Over the last 20 years, advances in industrial and research efforts in electronic power conversion have steadily been moving toward higher power densities, which has resulted in improvements in converter system performance; reductions in physical size; and reductions in mass, weight, and cost. However, this pushes the limits of the existing control, packaging, and thermal management technology for power converter systems.
Keywords :
AC-DC power convertors; DC-AC power convertors; electromagnetic interference; high-temperature electronics; power filters; SiC; electromagnetic interference filter; electronic power conversion; gate drive design; high-power-density three-phase AC-DC-AC converter; high-temperature hardware; high-temperature package; high-temperature three-phase AC-DC-AC converter; power 10 kW; power converter systems; power density; prototype converter system; temperature 250 degC; thermal management technology; thermal system; three-phase AC-DC-AC converter; Electromagnetic interference; Electronic packaging thermal management; High-temperature techniques; Logic gates; Power conversion; Research and development; Silicon carbide;
fLanguage :
English
Journal_Title :
Industrial Electronics Magazine, IEEE
Publisher :
ieee
ISSN :
1932-4529
Type :
jour
DOI :
10.1109/MIE.2012.2231729
Filename :
6482290
Link To Document :
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