DocumentCode :
1763436
Title :
Enabling NAND Flash Memory Use Soft-Decision Error Correction Codes at Minimal Read Latency Overhead
Author :
Guiqiang Dong ; Ningde Xie ; Tong Zhang
Author_Institution :
Skyera Inc., San Jose, CA, USA
Volume :
60
Issue :
9
fYear :
2013
fDate :
Sept. 2013
Firstpage :
2412
Lastpage :
2421
Abstract :
With the aggressive technology scaling and use of multi-bit per cell storage, NAND flash memory is subject to continuous degradation of raw storage reliability and demands more and more powerful error correction codes (ECC). This inevitable trend makes conventional BCH code increasingly inadequate, and iterative coding solutions such as LDPC codes become very natural alternative options. However, these powerful coding solutions demand soft-decision memory sensing, which results in longer on-chip memory sensing latency and memory-to-controller data transfer latency. Leveraging well-established lossless data compression theories, this paper presents several simple design techniques that can reduce such latency penalty caused by soft-decision ECCs. Their effectiveness have been well demonstrated through extensive simulations, and the results suggest that the latency can be reduced by up to 85.3%.
Keywords :
BCH codes; NAND circuits; error correction codes; flash memories; integrated circuit reliability; parity check codes; radiation hardening (electronics); BCH code; LDPC codes; NAND flash memory; memory-to-controller data transfer latency; minimal read latency overhead; multibit per cell storage; raw storage reliability; soft-decision ECC; soft-decision error correction codes; LDPC; NAND flash memory; lossless compression; soft sensing;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2013.2244361
Filename :
6529180
Link To Document :
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