Interfaces of Zinc Phosphide Magnesium Schottky Diodes

Author

Mushrush, Melissa ; Sharma, Mukesh ; Rozeveld, Steve ; Wright, Ryan ; Cimaroli, Alex ; Paudel, Naba ; Yanfa Yan

Author_Institution

Dow Chem. Co., Midland, MI, USA

Volume

4

Issue

6

fYear

2014

fDate

Nov. 2014

Firstpage

1680

Lastpage

1682

Abstract

We report on the microanalysis of interfacial diffusion in zinc phosphide (Zn₃P₂) Schottky diodes. The Zn₃P₂ layers were grown by close-space sublimation on Ag-coated borosilicate glass substrates. The Schottky diodes were formed by depositing Mg layers directly on the Zn₃P₂ and thermally annealing the stack. Microanalysis revealed interdiffusion of Mg and Zn at the Zn₃P₂/Mg interface, as well as significant diffusion of Zn into the Ag back electrode layer. Such interfacial diffusion is expected to affect the electronic properties of the Zn₃P₂ layers and, therefore, the diode properties.

Keywords

Schottky diodes; annealing; chemical analysis; chemical interdiffusion; electrodes; indium compounds; magnesium; semiconductor materials; sublimation; zinc compounds; Ag-B₂O₃-SiO₂; Zn₃P₂-Mg-ITO; close-space sublimation; diode properties; electronic properties; interfacial diffusion; magnesium layers; microanalysis; semiconductor material; silver back electrode layer; silver-coated borosilicate glass substrates; thermal annealing; zinc phosphide magnesium Schottky diodes; Diffusion processes; Indium tin oxide; Performance evaluation; Photovoltaic cells; Schottky diodes; Zinc compounds; Close-space sublimation (CSS); Schottky diodes; diffusion; earth-abundant photovoltaics; interfaces; microanalysis; zinc phosphide;

fLanguage

English

Journal_Title

Photovoltaics, IEEE Journal of

Publisher

ieee

ISSN

2156-3381

Type

jour

DOI

10.1109/JPHOTOV.2014.2359139

Filename

6918362