Title :
UV Enhanced Field Emission Properties of ZnO Nanosheets With Different NaOH Concentration
Author :
Lin-Tzu Lai ; Sheng-Joue Young ; Yi-Hsing Liu ; Zheng-Dong Lin ; Shoou-Jinn Chang
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
In this paper, vertical ZnO nanosheets are synthesized on Si substrate using a simple solution-based method at room temperature to realize a field emission device. The thin nanosheets that were perpendicular to the Si substrate surface were mutually interwoven into net and formed a continuous nanosheet film, with a unique surface morphology and a high surface-to-volume ratio. The improvement in the FE properties under UV illumination is attributed to the generation of a large number of excited electrons and the edge effect, and demonstrates that the presented route is a simple route for realizing field emission devices. This method has low cost and effectively improves the FE properties of the devices.
Keywords :
II-VI semiconductors; field emission; nanofabrication; nanostructured materials; semiconductor growth; semiconductor thin films; surface morphology; wide band gap semiconductors; zinc compounds; NaOH concentration; Si; Si substrate surface; UV enhanced field emission properties; UV illumination; ZnO; continuous nanosheet film; edge effect; excited electrons; field emission device; simple solution-based method; surface morphology; surface-to-volume ratio; temperature 293 K to 298 K; vertical ZnO nanosheets; II-VI semiconductor materials; Lighting; Nanoscale devices; Nanostructures; Silicon; Substrates; Zinc oxide; ZnO nanosheet; field emission;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2015.2443837