• DocumentCode
    1763779
  • Title

    UV Enhanced Field Emission Properties of ZnO Nanosheets With Different NaOH Concentration

  • Author

    Lin-Tzu Lai ; Sheng-Joue Young ; Yi-Hsing Liu ; Zheng-Dong Lin ; Shoou-Jinn Chang

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    14
  • Issue
    4
  • fYear
    2015
  • fDate
    42186
  • Firstpage
    776
  • Lastpage
    781
  • Abstract
    In this paper, vertical ZnO nanosheets are synthesized on Si substrate using a simple solution-based method at room temperature to realize a field emission device. The thin nanosheets that were perpendicular to the Si substrate surface were mutually interwoven into net and formed a continuous nanosheet film, with a unique surface morphology and a high surface-to-volume ratio. The improvement in the FE properties under UV illumination is attributed to the generation of a large number of excited electrons and the edge effect, and demonstrates that the presented route is a simple route for realizing field emission devices. This method has low cost and effectively improves the FE properties of the devices.
  • Keywords
    II-VI semiconductors; field emission; nanofabrication; nanostructured materials; semiconductor growth; semiconductor thin films; surface morphology; wide band gap semiconductors; zinc compounds; NaOH concentration; Si; Si substrate surface; UV enhanced field emission properties; UV illumination; ZnO; continuous nanosheet film; edge effect; excited electrons; field emission device; simple solution-based method; surface morphology; surface-to-volume ratio; temperature 293 K to 298 K; vertical ZnO nanosheets; II-VI semiconductor materials; Lighting; Nanoscale devices; Nanostructures; Silicon; Substrates; Zinc oxide; ZnO nanosheet; field emission;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2015.2443837
  • Filename
    7123649