Theoretical Analysis of Resonant Cavity p-Type Quantum Dot Infrared Photodetector

Author

Negi, C.M.S. ; Kumar, Dinesh ; Gupta, Suneet K. ; Kumar, Jayant

Author_Institution

Dept. of Electron., Banasthali Vidyapith, Newai, India

Volume

49

Issue

10

fYear

2013

fDate

Oct. 2013

Firstpage

839

Lastpage

845

Abstract

A theoretical analysis for resonant cavity enhanced p-type quantum dot (QD) infrared photo-detector that uses intervalence subband transitions in In_xGa_1-xAs/GaAs QDs is presented. Multiband effective mass k.p model with the strain effect is used to calculate valance subband energy levels. Photocurrent spectra, response wavelength, and dark current density of QD infrared detector have been calculated. The calculations have been performed for a wide range of dot sizes, compositions, dot height, bias voltages, and temperatures. The effect of QD height, radius, and composition on the response of the photodetectors has been analyzed and some criteria for performance improvement have been suggested.

Keywords

III-V semiconductors; current density; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; valence bands; In_xGa_1-xAs-GaAs; QD height; QD infrared detector; bias voltages; dark current density; dot height; dot sizes; intervalence subband transitions; multiband effective mass k.p model; photocurrent spectra; quantum dots; resonant cavity p-type quantum dot infrared photodetector; response wavelength; strain effect; valence subband energy levels; Cavity resonators; Dark current; Gallium arsenide; Photoconductivity; Quantum dots; Strain; Tunneling; Dark current density; intersubband transitions; photocurrent spectra; quantum dot infrared photodetector; response wavelength; valance subband structure;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2013.2279566

Filename

6587278