A Technique to Improve the Performance of an NPN HBT on Thin-Film SOI

Author

Misra, Prasanna Kumar ; Qureshi, Shaima

Author_Institution

Indian Inst. of Technol. Kanpur, Kanpur, India

Volume

1

Issue

4

fYear

2013

fDate

41365

Firstpage

92

Lastpage

98

Abstract

The performance of an npn SiGe HBT on thin-film silicon on insulator (SOI) is investigated using 2-D numerical simulation. A technique of using N+ buried layer has been presented to improve the performance of an SiGe HBT on thin-film SOI. The tradeoff in the performance of HBT has been observed and the results are compared to the standard SOI HBT. The HBT offers better βV_A product at high collector currents. A 341 GHzV of f_tBV_CEO product can be obtained by using this technique. The scalability of film thickness is applied and the enhancement in the speed is observed. The self-heating performance of the proposed HBT is studied and the BOX thickness has been scaled to improve the thermal performance. The maximum lattice temperature is obtained. The proposed HBT is suitable for RF applications and can be used in addition to the existing 130 nm SOI CMOS technology for better performance.

Keywords

CMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; semiconductor thin films; silicon-on-insulator; 2-D numerical simulation; CMOS technology; HBT; NPN; RF applications; SiGe; collector currents; film thickness; maximum lattice temperature; self-heating performance; thermal performance; thin-film silicon on insulator; wavelength 130 nm; Doping; Films; Heating; Heterojunction bipolar transistors; Performance evaluation; Resistance; Silicon germanium; Self-heating; Sentaurus; SiGe HBT; silicon on insulator (SOI); thin BOX;

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2013.2253597

Filename

6482578