Title :
NAND Flash Innovations
Author :
Aritome, Seiichi
Author_Institution :
R&D Div., SK Hynix, Icheon, South Korea
Abstract :
Recent progress in mobile equipments (ex. smartphone and tablet-PC) requires further effort in developing higher density and higher reliability nonvolatile semiconductor memories. A breakthrough in the field of nonvolatile memories was the invention of the Flash memory by Prof. Fujio Masuoka [1]. The Flash memory had many advantages in comparison with other nonvolatile memories. Therefore, the development of Flash memory has been explosively accelerated.
Keywords :
NAND circuits; circuit reliability; flash memories; random-access storage; NAND flash innovations; flash memory; mobile equipments; nonvolatile semiconductor memories; reliability; Flash memories; Mobile communication; Mobile handsets; Nonvolatile memory; Semiconductor memory; Smart phones;
Journal_Title :
Solid-State Circuits Magazine, IEEE
DOI :
10.1109/MSSC.2013.2278083
