DocumentCode :
1763871
Title :
A 0.3 THz Radiating Active \\times{\\hbox {27}} Frequency Multiplier Chain With 1 mW Radiated Power in CMOS 65-nm
Author :
Jameson, Samuel ; Socher, Eran
Author_Institution :
Sch. of Electr. Eng., Tel Aviv Univ., Tel Aviv, Israel
Volume :
5
Issue :
4
fYear :
2015
fDate :
42186
Firstpage :
645
Lastpage :
648
Abstract :
In this paper, a ×27 radiating active frequency multiplier chain at 288 GHz is presented. The circuit output is connected to a single on-chip ring antenna radiating a record high total radiated power of 1 mW for a DC power consumption of 284 mW at 288 GHz. The circuit has a -3 dB bandwidth of 15 GHz (277-292 GHz), an EIRP of +10.2 dBm and a record radiated DC-to-RF efficiency of 0.34% for a radiating frequency multiplying chain, enabled by direct drain transistor to on-chip antenna connection. The antenna has a measured directivity of +10.2 dBi at 288 GHz. Realized in a 65-nm technology, this is the first CMOS integrated locked radiating source to achieve 1 mW of radiated power above 0.2 THz.
Keywords :
CMOS integrated circuits; antennas; terahertz wave devices; CMOS integrated locked radiating source; DC power consumption; bandwidth; direct drain transistor; frequency 0.3 THz; frequency 15 GHz; frequency 288 GHz; high total radiated power; on-chip antenna connection; power 1 mW; power 284 mW; radiating active frequency multiplier chain; single on-chip ring antenna; Antenna measurements; Antennas; CMOS integrated circuits; Power generation; System-on-chip; Topology; Transistors; Antenna; CMOS; J-band; THz; X-band; frequency multiplier; mm wave; power amplifier; ring; source; sub-mm wave;
fLanguage :
English
Journal_Title :
Terahertz Science and Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-342X
Type :
jour
DOI :
10.1109/TTHZ.2015.2439056
Filename :
7123677
Link To Document :
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