DocumentCode :
1763901
Title :
Selecting Single Photon Avalanche Diode (SPAD) Passive-Quenching Resistance: An Approach
Author :
Savuskan, V. ; Javitt, M. ; Visokolov, G. ; Brouk, Igor ; Nemirovsky, Yael
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Volume :
13
Issue :
6
fYear :
2013
fDate :
41426
Firstpage :
2322
Lastpage :
2328
Abstract :
An approach useful for designing the passive quenching circuitry of single-photon avalanche diodes (SPADs) is presented. A method is introduced which enables a chip designer to correctly select the appropriate resistance of the passive quenching component of the chip. The range of external resistance required for adequate quenching can be determined solely from the measured dc I-V characteristics of the SPAD. The tradeoff between various allowable values of resistance is discussed.
Keywords :
avalanche diodes; network synthesis; passive networks; photons; DC measurement; I-V characteristics; SPAD; passive-quenching resistance circuit design; single photon avalanche diode; Electrical resistance measurement; Junctions; Mathematical model; Resistance; Resistors; Transient analysis; Voltage measurement; CMOS SPAD; passive quenching; single photon avalanche diode (SPAD);
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2013.2253603
Filename :
6482584
Link To Document :
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