Title :
Design and Implementation of Integrated Common Mode Capacitors for SiC-JFET Inverters
Author :
Robutel, Remi ; Martin, Christian ; Buttay, Cyril ; Morel, Herve ; Mattavelli, Paolo ; Boroyevich, Dushan ; Meuret, Regis
Author_Institution :
INSA Lyon, Univ. de Lyon, Villeurbanne, France
Abstract :
This paper deals with the issue of electromagnetic interference (EMI) in SiC-JFET inverter power modules, and proposes a solution to limit conducted emissions at high frequencies. SiC-JFET inverters can achieve very fast switching, thereby reducing commutation losses, at the cost of a high level of EMI. In order to limit conducted EMI emissions, it is proposed to integrate small-value common-mode (CM) capacitors, directly into the power module. High-frequency noise, which is usually difficult to filter, is then contained within the module, thus keeping it far from the external network. This approach is in line with the current trend toward the integration of various functions (such as protection, sensors or drivers) around power devices in modern power modules. To demonstrate this concept, the resulting CM noise was investigated, and compared with a standard configuration. Simulations were used to design the integrated capacitors, and measurements were carried out on an experimental SiC-JFET half-bridge structure. A significant reduction was achieved in the experimentally observed CM conducted emissions, with a very minor influence on the switching waveforms, losses, and overall size of the system. The benefits and limitations of this design are discussed for the case of mid-power range inverters for aircraft applications.
Keywords :
capacitors; commutation; electromagnetic interference; junction gate field effect transistors; power field effect transistors; semiconductor device measurement; semiconductor device noise; silicon compounds; switching convertors; wide band gap semiconductors; CM capacitor; EMI emission; Integrated small-value common-mode capacitor; SiC; SiC-JFET inverter power module; aircraft application; commutation loss; electromagnetic interference; experimental SiC-JFET half-bridge structure; high-frequency noise; midpower range inverter; switching waveform inverter; Capacitors; Electromagnetic interference; Integrated circuit modeling; Inverters; JFETs; Multichip modules; Switches; Electromagnetic compatibility; inverters; multichip modules;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2013.2279772