DocumentCode :
1764396
Title :
Shunt-Enhanced, Lead-Driven Bifurcation of EEC Sensor Responsivity
Author :
Werner, Fletcher M. ; Solin, Stuart A.
Author_Institution :
Dept. of Phys., Washington Univ., St. Louis, MO, USA
Volume :
15
Issue :
10
fYear :
2015
fDate :
Oct. 2015
Firstpage :
5790
Lastpage :
5794
Abstract :
We report the observed bifurcation in extraordinary electroconductance (EEC) sensor response to direct reverse bias based on measurement lead location as well as a dramatic enhancement in responsivity achieved via a modification of the shunt geometry. A maximum percent change in the four-point resistance of 130856% was achieved under a direct reverse bias of -1 V using an enhanced shunt design, a 325 fold increase over the conventional EEC square shunt design. This result was accompanied by an observed bifurcation in sensor response, driven by a rotation of the four-point measurement leads.
Keywords :
bifurcation; electric resistance; electric sensing devices; electrical conductivity measurement; EEC sensor responsivity; direct reverse bias; extraordinary electroconductance sensor; four-point resistance; lead-driven bifurcation; measurement lead location; responsivity enhancement; rotation; sensor response; shunt geometry; shunt-enhanced bifurcation; voltage -1 V; Electrical resistance measurement; Lead; Resistance; Semiconductor device measurement; Sensor phenomena and characterization; Voltage measurement; Charge sensing; GaAs; Ohmic contacts; Schottky barrier; Si-doping; charge sensing; direct biasing; electric field sensing; electroconductance; epitaxial; extraordinary; geometric effects; heterostructure; hybrid; ideality factor; responsivity; semiconductor; shunt;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2015.2445971
Filename :
7124430
Link To Document :
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