Shunt-Enhanced, Lead-Driven Bifurcation of EEC Sensor Responsivity

Author

Werner, Fletcher M. ; Solin, Stuart A.

Author_Institution

Dept. of Phys., Washington Univ., St. Louis, MO, USA

Volume

15

Issue

10

fYear

2015

fDate

Oct. 2015

Firstpage

5790

Lastpage

5794

Abstract

We report the observed bifurcation in extraordinary electroconductance (EEC) sensor response to direct reverse bias based on measurement lead location as well as a dramatic enhancement in responsivity achieved via a modification of the shunt geometry. A maximum percent change in the four-point resistance of 130856% was achieved under a direct reverse bias of -1 V using an enhanced shunt design, a 325 fold increase over the conventional EEC square shunt design. This result was accompanied by an observed bifurcation in sensor response, driven by a rotation of the four-point measurement leads.

Keywords

bifurcation; electric resistance; electric sensing devices; electrical conductivity measurement; EEC sensor responsivity; direct reverse bias; extraordinary electroconductance sensor; four-point resistance; lead-driven bifurcation; measurement lead location; responsivity enhancement; rotation; sensor response; shunt geometry; shunt-enhanced bifurcation; voltage -1 V; Electrical resistance measurement; Lead; Resistance; Semiconductor device measurement; Sensor phenomena and characterization; Voltage measurement; Charge sensing; GaAs; Ohmic contacts; Schottky barrier; Si-doping; charge sensing; direct biasing; electric field sensing; electroconductance; epitaxial; extraordinary; geometric effects; heterostructure; hybrid; ideality factor; responsivity; semiconductor; shunt;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2015.2445971

Filename

7124430