Crosstalk-Free Single Photon Avalanche Photodiodes Located in a Shared Well

Author

Vila, Ana ; Vilella, Eva ; Alonso, Omar ; Dieguez, Angel

Author_Institution

Electron. Dept., Univ. of Barcelona, Barcelona, Spain

Volume

35

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

99

Lastpage

101

Abstract

Advances in single photon avalanche detector (SPAD) arrays propose improving the fill factor by confining several SPADs in the same well, with a main issue related to crosstalk. In applications that measure at fixed times, the pixels can be inhibited before the arrival of the crosstalk charge. This letter reports the crosstalk characterization in an array of SPADs, where the sensors share the same n-well (fill factor 67%), and fabricated in a conventional CMOS technology. The reduction of the gating time completely eliminates the crosstalk, as predicted by the theory and TCAD simulations.

Keywords

CMOS integrated circuits; avalanche photodiodes; crosstalk; integrated optoelectronics; CMOS technology; SPAD arrays; TCAD simulations; crosstalk charge; crosstalk-free single photon avalanche photodiodes; fill factor; n-well; sensors; shared well; CMOS integrated circuits; CMOS technology; Crosstalk; Detectors; Logic gates; Photonics; APD; CMOS; SPAD; avalanche; crosstalk; gating; noise;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2288983

Filename

6670696