• DocumentCode
    1764452
  • Title

    Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs” [Aug 12 2033-2036]

  • Author

    Liao, M.-H. ; Chen, C.H. ; Chang, L.C. ; Yang, C. ; Kao, S.C.

  • Author_Institution
    ,
  • Volume
    62
  • Issue
    4
  • fYear
    2015
  • fDate
    42095
  • Firstpage
    1360
  • Lastpage
    1360
  • Abstract
    In our original work [1], we demonstrated the usage of N-IMP in STI SiO2 to relax the compressive stress in the n-MOSFETs and further improve the core device performance accordingly. We wish to offer an apology for the typo in the original work and want to provide the new data/findings in the erratum paper.
  • Keywords
    Compressive stress; Ion implantation; Isolation technology; MOSFET; MOSFET circuits; Nitrogen;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2405334
  • Filename
    7060664
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1764452