Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs” [Aug 12 2033-2036]

In our original work [1], we demonstrated the usage of N-IMP in STI SiO₂ to relax the compressive stress in the n-MOSFETs and further improve the core device performance accordingly. We wish to offer an apology for the typo in the original work and want to provide the new data/findings in the erratum paper.