GaN-Based Light-Emitting Diodes With Staircase Electron Injector Structure

Author

Shoou-Jinn Chang ; Lin, Yen-Yu

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

10

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

162

Lastpage

166

Abstract

The authors experimentally studied GaN-based light-emitting diodes (LEDs) with both an staircase electron injector (SEI) structure and a conventional electron blocking layer (EBL). With the EBL, it was found that we could enhance LED output power, reduce forward voltage, and mitigate efficiency droop by inserting the SEI structure. These improvements could all be attributed to the effective cooling of the injected hot electrons. However, it was also found that some of the injected electrons could still leak into the p-GaN layer in the LED with SEI structure but without the EBL.

Keywords

III-V semiconductors; charge injection; cooling; gallium compounds; hot carriers; light emitting diodes; wide band gap semiconductors; EBL; LED output power enhancement; SEI structure insertion; efficiency droop mitigation; electron blocking layer; forward voltage reduction; injected hot electron cooling; light emitting diode; p-GaN layer; staircase electron injector; Art; Current measurement; Gallium nitride; Light emitting diodes; Power generation; Quantum well devices; Semiconductor device measurement; Efficiency droop; GaN-based light-emitting diodes (LEDs); electron blocking layer (EBL); staircase electron injector (SEI) structure;

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2013.2291776

Filename

6670698