DocumentCode :
1764644
Title :
Mobility Degradation Effect to Hooge\´s Constant in Recessed-Gate 
MIS Power Transistors
Author :
Hyun-Sik Choi
Author_Institution :
Semicond. Device Lab., Samsung Electron. Corp., Yongin, South Korea
Volume :
35
Issue :
6
fYear :
2014
fDate :
41791
Firstpage :
624
Lastpage :
626
Abstract :
We investigated the low-frequency noise (LFN) characteristics of recessed-gate Al2O3/AlGaN/GaN MIS power transistors. Compared with normally ON devices, the gate-recess processes are only added in normally OFF devices. The extracted threshold voltage (Vth) values of the normally ON and normally OFF devices are -7 and 4 V, respectively. However, the normally OFF devices additionally suffer from mobility degradation. Furthermore, the Hooge´s constant (αH) of the normally OFF devices is ~15 times higher than that of the normally ON devices. From the LFN measurement results, the main cause for this significant difference is the mobility fluctuation due to impurity scattering in the recessed-gate devices.
Keywords :
III-V semiconductors; MIS devices; alumina; aluminium compounds; gallium compounds; power transistors; wide band gap semiconductors; Al2O3-AlGaN-GaN; Hooge constant; LFN measurement; impurity scattering; mobility degradation effect; normally OFF devices; normally ON devices; recessed-gate MIS power transistors; recessed-gate devices; threshold voltage values; voltage -7 V; voltage 4 V; Aluminum gallium nitride; Gallium nitride; Impurities; Logic gates; Mathematical model; Power transistors; Scattering; ${rm Al}_{2}{rm O}_{3}/{rm AlGaN}/{rm GaN}$ MIS power transistors; Al₂O₃/AlGaN/GaN MIS power transistors; Hooge´s constant $(alpha_{bf H})$; Hooge´s constant (αH).; Low-frequency noise (LFN); normally off devices;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2318513
Filename :
6809178
Link To Document :
