DocumentCode
1764644
Title
Mobility Degradation Effect to Hooge\´s Constant in Recessed-Gate 
MIS Power Transistors
Author
Hyun-Sik Choi
Author_Institution
Semicond. Device Lab., Samsung Electron. Corp., Yongin, South Korea
Volume
35
Issue
6
fYear
2014
fDate
41791
Firstpage
624
Lastpage
626
Abstract
We investigated the low-frequency noise (LFN) characteristics of recessed-gate Al2O3/AlGaN/GaN MIS power transistors. Compared with normally ON devices, the gate-recess processes are only added in normally OFF devices. The extracted threshold voltage (Vth) values of the normally ON and normally OFF devices are -7 and 4 V, respectively. However, the normally OFF devices additionally suffer from mobility degradation. Furthermore, the Hooge´s constant (αH) of the normally OFF devices is ~15 times higher than that of the normally ON devices. From the LFN measurement results, the main cause for this significant difference is the mobility fluctuation due to impurity scattering in the recessed-gate devices.
Keywords
III-V semiconductors; MIS devices; alumina; aluminium compounds; gallium compounds; power transistors; wide band gap semiconductors; Al2O3-AlGaN-GaN; Hooge constant; LFN measurement; impurity scattering; mobility degradation effect; normally OFF devices; normally ON devices; recessed-gate MIS power transistors; recessed-gate devices; threshold voltage values; voltage -7 V; voltage 4 V; Aluminum gallium nitride; Gallium nitride; Impurities; Logic gates; Mathematical model; Power transistors; Scattering; ${rm Al}_{2}{rm O}_{3}/{rm AlGaN}/{rm GaN}$ MIS power transistors; Al₂O₃/AlGaN/GaN MIS power transistors; Hooge´s constant $(alpha_{bf H})$; Hooge´s constant (αH).; Low-frequency noise (LFN); normally off devices;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2318513
Filename
6809178
Link To Document