Title :
Germanium p-n Junctions by Laser Doping for Photonics/Microelectronic Devices
Author :
Yiliang Bao ; Keye Sun ; Dhar, N. ; Gupta, Mool C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
A method of forming germanium p-n junction by laser doping is demonstrated. Low bulk and surface leakage current density of 5.4 mA/cm2 and 2.0 μA/cm, respectively, were obtained. The leakage current density was comparable with the diodes formed by rapid thermal diffusion, but approximately two orders of magnitude lower than the diodes formed by ion implantation. The performance of the laser doped junction in photonic devices was demonstrated through the fabrication of 130-μm diameter photodetector, which showed a responsivity of 0.46 A/W at 1.55-μm wavelength at 0 V bias and a -3-dB bandwidth of 190 MHz.
Keywords :
current density; germanium; integrated optics; ion implantation; laser materials processing; optical fabrication; p-n junctions; photodetectors; rapid thermal processing; Ge; bandwidth 190 MHz; diodes; germanium p-n junctions; ion implantation; laser doped junction performance; laser doping; low bulk current density; microelectronic devices; photodetector fabrication; photonic devices; rapid thermal diffusion; responsivity; size 130 mum; surface leakage current density; voltage 0 V; wavelength 1.55 mum; Doping; Germanium; Junctions; Measurement by laser beam; Photodetectors; Semiconductor lasers; Substrates; Germanium; doping; photodetector;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2321500
