Broadband Frequency Dispersion Small-Signal Modeling of the Output Conductance and Transconductance in AlInN/GaN HEMTs

Author

Nsele, S.D. ; Escotte, Laurent ; Tartarin, J. ; Piotrowicz, S. ; Delage, S.L.

Author_Institution

Lab. d´Anal. et d´Archit. des Syst., Univ. of Toulouse, Toulouse, France

Volume

60

Issue

4

fYear

2013

fDate

41365

Firstpage

1372

Lastpage

1378

Abstract

Frequency dispersion of transconductance and output conductance in AlInN/GaN high electron mobility transistors is investigated in this paper. Broadband dispersion effects in the microwave frequency range are reported for the first time. A small-signal model is developed. Trapping effects are taken into account with parasitic electrical networks including distributed time constants. The model is compared with experimental data for several bias conditions and different types of dispersion.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave transistors; semiconductor device models; wide band gap semiconductors; AlInN-GaN; HEMT; broadband frequency dispersion; distributed time constants; high electron mobility transistors; microwave frequency range; output conductance; small signal modeling; transconductance dispersion; trapping effects; Dispersion; Frequency measurement; Gallium nitride; HEMTs; MODFETs; Temperature measurement; Transconductance; AlInN/GaN HEMTs; dispersion effects; distributed time constants;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2248158

Filename

6482673