Phenomenological Compact Model for QM Charge Centroid in Multigate FETs

Author

Venugopalan, Sarad ; Karim, M.A. ; Salahuddin, Sania ; Niknejad, Ali M. ; Hu, Chenming Calvin

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, Berkeley, CA, USA

Volume

60

Issue

4

fYear

2013

fDate

41365

Firstpage

1480

Lastpage

1484

Abstract

We present a phenomenological compact model of the inversion charge centroid considering both the structural and electrical confinements in multigate FETs. The developed new model shows a good match with Technology-CAD (TCAD) data for both physical parameters such as fin thickness in FinFET and wire radius in cylindrical FET, channel doping, and electrical bias variation. With the introduction of fitting parameters, the model is capable of handling hole and electron carriers, various channel materials, and process variations, such as fin shape, etc.

Keywords

MOSFET; doping; semiconductor device models; technology CAD (electronics); FinFET; TCAD data; channel doping; cylindrical FET; electrical bias variation; electrical confinements; fin thickness; fitting parameters; inversion charge centroid; multigate FET; phenomenological compact model; physical parameters; quantum-mechanical charge centroid; structural confinements; technology-CAD data; wire radius; Capacitance; Doping; Field effect transistors; Logic gates; Mathematical model; Semiconductor device modeling; Semiconductor process modeling; BSIM-CMG; FinFET; charge centroid; cylindrical gate (CG); double gate (DG); effective oxide capacitance; gate-all-around FET; multigate; nanowire FET; quantum–mechanical (QM) effects; surround gate; trigate;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2245419

Filename

6482675