Title :
Effect of Plasma Radical Composition in Intrinsic a-Si:H on Performances of Heterojunction Solar Cells
Author :
Yun-Shao Cho ; Chia-Hsun Hsu ; Shui-Yang Lien ; Dong-Sing Wuu ; Pin Han ; Chia-Fu Chen ; Jui-Hao Wang
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
In this paper, intrinsic hydrogenated amorphous silicon films are prepared by plasma enhanced chemical vapor deposition. The plasma spectra obtained by an optical emission spectroscopy at different deposition regions are analyzed. By comparing these spectra, the nonuniform deposition regions that could significantly limit the solar cell performance can be found. Tilting the substrate with a certain angle can adjust the electrode-to-substrate distance at the required regions so that the uniformity can be improved. In the case of our experiment, a substrate tilt angle of 1.5° results in a uniformity of within ±8% and a 156 × 156-mm2 heterojunction solar cell with conversion efficiency of 18.55% that is improved by 11% compared with the cell without substrate tilting.
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; plasma CVD; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; silicon; solar cells; Si:H; conversion efficiency; electrode-to-substrate distance; heterojunction solar cells; intrinsic hydrogenated amorphous silicon films; nonuniform deposition regions; optical emission spectroscopy; plasma enhanced chemical vapor deposition; plasma radical composition; plasma spectra; Chemical vapor deposition; Photovoltaic cells; Plasmas; Silicon; Substrates; Surface treatment; Heterojunction (HJ) solar cell; intrinsic hydrogenated amorphous silicon; optical emission spectroscopy; uniformity; uniformity.;
Journal_Title :
Plasma Science, IEEE Transactions on
DOI :
10.1109/TPS.2014.2333514