Title :
Supply Voltage Dependent On-Chip Single-Event Transient Pulse Shape Measurements in 90-nm Bulk CMOS Under Alpha Irradiation
Author :
Hofbauer, Michael ; Schweiger, K. ; Zimmermann, Horst ; Giesen, Ulrich ; Langner, Felix ; Schmid, Ulrich ; Steininger, Andreas
Author_Institution :
Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria
Abstract :
Direct on-chip pulse shape measurements of single-event transients (SETs) in a single inverter in 90-nm bulk CMOS have been performed at the microbeam facility at the Physikalisch-Technische Bundesanstalt (PTB), Braunschweig, Germany. Alpha particles with an energy of 8 MeV were used as projectiles, and the supply voltage dependence of the arising SETs was investigated. A strong dependence of the resulting pulse heights, widths, and shapes on the supply voltage could be observed.
Keywords :
CMOS integrated circuits; alpha-particle effects; alpha-particles; integrated circuit measurement; invertors; pulse shaping circuits; Braunschweig; Germany; PTB; Physikalisch-Technische Bundesanstalt; SET; alpha irradiation; alpha particles; bulk CMOS; direct on-chip pulse shape measurement; electron volt energy 8 MeV; microbeam facility; on-chip single-event transients; projectile; pulse height; single inverter; size 90 nm; supply voltage dependence; Atmospheric measurements; Inverters; Particle measurements; Pulse measurements; System-on-chip; Transistors; Voltage measurement; 90-nm CMOS; Alpha-particle radiation; analog on-chip measurement; microbeam experiments; particle beams; radiation effects in ICs; radiation effects in devices; sense amplifier; single-event effects; single-event transients; supply voltage dependence;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2245679
