Set Variability and Failure Induced by Complementary Switching in Bipolar RRAM

Author

Balatti, S. ; Ambrogio, Stefano ; Gilmer, D.C. ; Ielmini, Daniele

Author_Institution

Dipt. di Elettron. e Inf., Politec. di Milano, Milan, Italy

Volume

34

Issue

7

fYear

2013

fDate

41456

Firstpage

861

Lastpage

863

Abstract

The resistive switching memory (RRAM) offers fast switching, low-voltage operation, and scalable device area. However, reliability and variability issues must be understood, particularly in the low-current operation regime. This letter addresses set-state variability and presents a new set failure phenomenon in RRAM, leading to a high-resistance tail in the set-state distribution. The set failure is due to complementary switching of the RRAM, causing an increase of resistance soon after the set transition. The dependence of set failure on the programing current is explained by the increasing voltage stress across the RRAM device causing filament disconnection.

Keywords

random-access storage; RRAM device; bipolar RRAM; complementary switching; filament disconnection; high resistance tail; low voltage operation; resistance soon; resistive switching memory; scalable device area; set failure phenomenon; set state distribution; set state variability; set transition; voltage stress; Memory modeling; memory reliability; nonvolatile memory; resistive-switching memory (RRAM);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2261451

Filename

6530615