DocumentCode
1764927
Title
Substantial Enhancement of the Dielectric Properties of Amorphous 
Composition Spreads Through , leakage current density (J<sub>L</sub>), and equivalent oxide thickness (EOT) of 12-nm-thick Y<sub>2</sub>O<sub>3</sub>-TiO<sub>2</sub> and N<sub>2</sub>-doped Y<sub>2</sub>O<sub>3</sub>-TiO<sub>2</sub> (YON-TiON) libraries were successfully mapped using a combinatorial sputtering system. N<sub>2</sub> was determined to enhance these properties dramatically. In addition, the YON-TiON library exhibited excellent stability after four months of exposure to air. A highly promising composition range (60 at%-68 at% of TiO<sub>2</sub>), which exhibited amorphousness, κ > 30, J<sub>L</sub> <; 10<sup>-5</sup> A/cm<sup>2</sup>, and an EOT ≤ 1 nm, on the YON-TiON library for highly advanced gate-stacks was efficiently screened.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>amorphous state; doping; high-k dielectric thin films; leakage currents; permittivity; sputtering; titanium compounds; yttrium compounds; EOT; N<sub>2</sub> doping; N<sub>2</sub>-doped Y<sub>2</sub>O<sub>3</sub>-TiO<sub>2</sub> library; Y<sub>2</sub>O<sub>3</sub>-TiO<sub>2</sub>; Y<sub>2</sub>O<sub>3</sub>-TiO<sub>2</sub>:N<sub>2</sub>; YON-TiON library; amorphous Y<sub>2</sub>O<sub>3</sub>-TiO<sub>2</sub> composition; amorphous state; combinatorial sputtering system; dielectric constant; dielectric property enhancement; equivalent oxide thickness; gate stacks; leakage current density; size 12 nm; time 4 month; Dielectrics; Doping; Libraries; Logic gates; Silicon; Sputtering; ${rm Y}_{2}{rm O}_{3}hbox{--}{rm TiO}_{2}/{rm YON}hbox{--}{rm TiON}$; Amorphous; Y₂O₃-TiO₂/YON-TiON.; combinatorial sputtering; higher- $kappa$ dielectrics; higher-κ dielectrics;</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fLanguage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>English</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Journal_Title</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Electron Devices, IEEE Transactions on</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Publisher</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>ieee</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>ISSN</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>0018-9383</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Type</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>jour</h2></div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>DOI</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>10.1109/TED.2014.2318303</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Filename</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>6809211</div></div>
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