DocumentCode :
1764927
Title :
Substantial Enhancement of the Dielectric Properties of Amorphous
Composition Spreads Through
, leakage current density (J<sub>L</sub>), and equivalent oxide thickness (EOT) of 12-nm-thick Y<sub>2</sub>O<sub>3</sub>-TiO<sub>2</sub> and N<sub>2</sub>-doped Y<sub>2</sub>O<sub>3</sub>-TiO<sub>2</sub> (YON-TiON) libraries were successfully mapped using a combinatorial sputtering system. N<sub>2</sub> was determined to enhance these properties dramatically. In addition, the YON-TiON library exhibited excellent stability after four months of exposure to air. A highly promising composition range (60 at%-68 at% of TiO<sub>2</sub>), which exhibited amorphousness, κ > 30, J<sub>L</sub> <; 10<sup>-5</sup> A/cm<sup>2</sup>, and an EOT ≤ 1 nm, on the YON-TiON library for highly advanced gate-stacks was efficiently screened.</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>amorphous state; doping; high-k dielectric thin films; leakage currents; permittivity; sputtering; titanium compounds; yttrium compounds; EOT; N<sub>2</sub> doping; N<sub>2</sub>-doped Y<sub>2</sub>O<sub>3</sub>-TiO<sub>2</sub> library; Y<sub>2</sub>O<sub>3</sub>-TiO<sub>2</sub>; Y<sub>2</sub>O<sub>3</sub>-TiO<sub>2</sub>:N<sub>2</sub>; YON-TiON library; amorphous Y<sub>2</sub>O<sub>3</sub>-TiO<sub>2</sub> composition; amorphous state; combinatorial sputtering system; dielectric constant; dielectric property enhancement; equivalent oxide thickness; gate stacks; leakage current density; size 12 nm; time 4 month; Dielectrics; Doping; Libraries; Logic gates; Silicon; Sputtering; ${rm Y}_{2}{rm O}_{3}hbox{--}{rm TiO}_{2}/{rm YON}hbox{--}{rm TiON}$; Amorphous; Y₂O₃-TiO₂/YON-TiON.; combinatorial sputtering; higher- $kappa$ dielectrics; higher-κ dielectrics;</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fLanguage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>English</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Journal_Title : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Electron Devices, IEEE Transactions on</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Publisher : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>ieee</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>ISSN : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>0018-9383</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Type : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>jour</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>DOI : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>10.1109/TED.2014.2318303</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Filename : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>6809211</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Link To Document : </div><div class='valueDiv leftDirection leftAlign fullRecValueEnglish col-xs-8 col-sm-10'><a href='https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1764927' target='_blank'>https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1764927</a></div>
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