Title :
1060-nm Tunable Monolithic High Index Contrast Subwavelength Grating VCSEL
Author :
Ansbaek, Thor ; Il-Sug Chung ; Semenova, E.S. ; Yvind, Kresten
Author_Institution :
Dept. of Photonics Eng., Tech. Univ. of Denmark, Lyngby, Denmark
Abstract :
We present the first tunable vertical-cavity surface-emitting laser (VCSEL) where the top distributed Bragg reflector has been completely substituted by an air-cladded high-index-contrast subwavelength grating (HCG) mirror. In this way, an extended cavity design can be realized by reducing the reflection at the semiconductor-air interface using an anti-reflective coating (ARC). We demonstrate how the ARC can be integrated in a monolithic structure by oxidizing AlGaAs with high Al-content. The HCG VCSEL has the potential to achieve polarization stable single-mode output with high tuning efficiency. The HCG VCSEL shows a total tuning range of 16 nm around an emission wavelength of 1060 nm with 1-mW output power.
Keywords :
III-V semiconductors; aluminium compounds; antireflection coatings; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; integrated optics; laser cavity resonators; laser mirrors; laser modes; laser stability; laser tuning; light polarisation; light reflection; micro-optomechanical devices; quantum well lasers; surface emitting lasers; ARC; AlGaAs; HCG VCSEL; air-cladded high-index-contrast subwavelength grating mirror; antireflective coating; distributed Bragg reflector; emission wavelength; extended cavity design; monolithic structure; polarization stable single-mode output; power 1 mW; semiconductor-air interface; tunable monolithic high index contrast subwavelength grating VCSEL; tunable vertical-cavity surface-emitting laser; tuning efficiency; wavelength 1060 nm; Cavity resonators; Distributed Bragg reflectors; Micromechanical devices; Optical polarization; Tuning; Vertical cavity surface emitting lasers; III-V semiconductor materials; microelectromechanical systems; semiconductor lasers; vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2236087
