Vertical CdZnO/ZnO Quantum-Well Light-Emitting Diode

Author

Horng-Shyang Chen ; Shao-Ying Ting ; Che-Hao Liao ; Chih-Yen Chen ; Chieh Hsieh ; Yu-Feng Yao ; Hao-Tsung Chen ; Yean-Woei Kiang ; Chih-Chung Yang

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

25

Issue

3

fYear

2013

fDate

Feb.1, 2013

Firstpage

317

Lastpage

319

Abstract

A vertical light-emitting diode (VLED) with the CdZnO/n-ZnO quantum wells and n⁺-ZnO capping layer grown with molecular beam epitaxy and the p-GaN layer grown with metalorganic chemical vapor deposition, is fabricated and characterized. Its performances are compared with those of a lateral LED based on the same epitaxial structure to show the significantly lower device resistance, smaller leakage current, weaker output intensity saturation, relatively lower defect emission, and stronger emissions from the p-GaN and n-ZnO layers in the VLED.

Keywords

II-VI semiconductors; MOCVD; cadmium compounds; leakage currents; light emitting diodes; molecular beam epitaxial growth; quantum well devices; wide band gap semiconductors; zinc compounds; CdZnO-ZnO; VLED; capping layer; defect emissions; device resistance; leakage current; metalorganic chemical vapor deposition; molecular beam epitaxy; output intensity saturation; vertical quantum-well light-emitting diode; Gallium nitride; Light emitting diodes; Molecular beam epitaxial growth; Resistance; Substrates; Zinc oxide; CdZnO/ZnO quantum well; vertical light-emitting diode;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2236085

Filename

6392205