• DocumentCode
    1764974
  • Title

    A 5.8 nW 9.1-ENOB 1-kS/s Local Asynchronous Successive Approximation Register ADC for Implantable Medical Device

  • Author

    Tang, Hongying ; Zhuo Chao Sun ; Chew, Kin Wai Roy ; Siek, Liter

  • Author_Institution
    Div. of Circuits & Syst., Nanyang Technol. Univ., Singapore, Singapore
  • Volume
    22
  • Issue
    10
  • fYear
    2014
  • fDate
    Oct. 2014
  • Firstpage
    2220
  • Lastpage
    2224
  • Abstract
    This brief presents a 10-bits successive approximation register analog-to-digital converter (ADC) with a sampling rate of 1 kS/s for implantable medical devices. This ADC is implemented in a 65-nm CMOS process in which leakage current will be a key design parameter. It imposes the highest degree of simplicity in the design of the ADCs architecture. Thus, the transistor count is minimized, which reduces not only the active power, but also the number of leakage sources. The modified top-plate Vcm -based switching offers energy efficient switching at the capacitive-DAC (CDAC) and uses simple control logic. In addition, the proposed asymmetrical metal-oxide-metal capacitor reduces the size of the CDAC by 90% for a given gain error. Furthermore, the input referred offset voltage of the dynamic comparator can be improved by the top-plate Vcm-based switching method at system level without using any additional transistor. The other building blocks are also simplified for lower power consumption. This ADC occupies an area of 0.046 mm2. At 0.9 V and 1 kS/s, the 10-bits ADC consumes 5.8 nW, in which, 2.34 nW is contributed by leakage power consumption. The ADC achieves 9.1-ENOB and an energy efficiency of 10.94-fJ/conversion step.
  • Keywords
    CMOS digital integrated circuits; analogue-digital conversion; asynchronous circuits; biomedical electronics; comparators (circuits); leakage currents; prosthetics; ADCs architecture; CMOS process; active power; analog-to-digital converter; asymmetrical metal-oxide-metal capacitor; capacitive-DAC; control logic; design parameter; dynamic comparator; energy efficient switching; gain error; implantable medical device; input referred offset voltage; leakage current; leakage power consumption; leakage sources; local asynchronous successive approximation register ADC; modified top-plate Vcm-based switching method; power 2.34 nW; power 5.8 mW; size 65 nm; system level; transistor count; voltage 0.9 V; word length 10 bit; Capacitors; Clocks; Power demand; Radiation detectors; Switches; Transistors; Very large scale integration; Analog-to-digital converter (ADC); asynchronous; charge recycling; dynamic comparator; energy efficient; low leakage; low power; medical implant; successive approximation (SA); successive approximation register (SAR); successive approximation register (SAR).;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2013.2286393
  • Filename
    6670758