DocumentCode :
1764974
Title :
A 5.8 nW 9.1-ENOB 1-kS/s Local Asynchronous Successive Approximation Register ADC for Implantable Medical Device
Author :
Tang, Hongying ; Zhuo Chao Sun ; Chew, Kin Wai Roy ; Siek, Liter
Author_Institution :
Div. of Circuits & Syst., Nanyang Technol. Univ., Singapore, Singapore
Volume :
22
Issue :
10
fYear :
2014
fDate :
Oct. 2014
Firstpage :
2220
Lastpage :
2224
Abstract :
This brief presents a 10-bits successive approximation register analog-to-digital converter (ADC) with a sampling rate of 1 kS/s for implantable medical devices. This ADC is implemented in a 65-nm CMOS process in which leakage current will be a key design parameter. It imposes the highest degree of simplicity in the design of the ADCs architecture. Thus, the transistor count is minimized, which reduces not only the active power, but also the number of leakage sources. The modified top-plate Vcm -based switching offers energy efficient switching at the capacitive-DAC (CDAC) and uses simple control logic. In addition, the proposed asymmetrical metal-oxide-metal capacitor reduces the size of the CDAC by 90% for a given gain error. Furthermore, the input referred offset voltage of the dynamic comparator can be improved by the top-plate Vcm-based switching method at system level without using any additional transistor. The other building blocks are also simplified for lower power consumption. This ADC occupies an area of 0.046 mm2. At 0.9 V and 1 kS/s, the 10-bits ADC consumes 5.8 nW, in which, 2.34 nW is contributed by leakage power consumption. The ADC achieves 9.1-ENOB and an energy efficiency of 10.94-fJ/conversion step.
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; asynchronous circuits; biomedical electronics; comparators (circuits); leakage currents; prosthetics; ADCs architecture; CMOS process; active power; analog-to-digital converter; asymmetrical metal-oxide-metal capacitor; capacitive-DAC; control logic; design parameter; dynamic comparator; energy efficient switching; gain error; implantable medical device; input referred offset voltage; leakage current; leakage power consumption; leakage sources; local asynchronous successive approximation register ADC; modified top-plate Vcm-based switching method; power 2.34 nW; power 5.8 mW; size 65 nm; system level; transistor count; voltage 0.9 V; word length 10 bit; Capacitors; Clocks; Power demand; Radiation detectors; Switches; Transistors; Very large scale integration; Analog-to-digital converter (ADC); asynchronous; charge recycling; dynamic comparator; energy efficient; low leakage; low power; medical implant; successive approximation (SA); successive approximation register (SAR); successive approximation register (SAR).;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2013.2286393
Filename :
6670758
Link To Document :
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