Title :
A Low-Loss and High Isolation D-Band SPDT Switch Utilizing Deep-Saturated SiGe HBTs
Author :
Ulusoy, A. Cagri ; Song, Peter ; Schmid, Robert L. ; Khan, Wasif T. ; Kaynak, Mehmet ; Tillack, Bernd ; Papapolymerou, John ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
A single-pole double-throw switch, utilizing double-shunt, deep-saturated HBTs is implemented in a 0.13 μm SiGe BiCMOS technology, occupying 0.36 mm2 of IC area. A superior switch performance is identified when HBTs are operated in saturation regime, and state of the art performance is achieved at D-band frequencies from 96 to 163 GHz. Measurements show a minimum insertion loss of 2.6 dB at 120 and 150 GHz, a highest isolation of 29 dB at 120 GHz and an input 1 dB compression point of 17 dBm at 94 GHz, outperforming similar implementations in deep-scaled CMOS technologies.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; semiconductor switches; BiCMOS technology; D-band SPDT switch; SiGe; deep saturated HBT; frequency 120 GHz; frequency 150 GHz; frequency 94 GHz; frequency 96 GHz to 163 GHz; loss 2.6 dB; single pole double throw switch; size 0.13 mum; CMOS integrated circuits; Insertion loss; Loss measurement; Probes; Silicon germanium; Switches; Switching circuits; BiCMOS integrated circuits; MMICs; SiGe; millimeter wave integrated circuits; single-pole double-throw (SPDT) switch;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2014.2313529
