7 GHz MMIC GaN Doherty Power Amplifier With 47% Efficiency at 7 dB Output Back-Off

Author

Camarchia, Vittorio ; Fang, Jianwu ; Moreno Rubio, J. ; Pirola, Marco ; Quaglia, R.

Author_Institution

Dept. of Electron. & Telecommun., Politec. di Torino, Turin, Italy

Volume

23

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

34

Lastpage

36

Abstract

Design and characterization of a 7 GHz MMIC GaN Doherty Power Amplifier on TriQuint technology are presented. To the best of the authors´ knowledge, the present circuit, suitable for C-band point-to-point backhaul applications, represents the first example of a working MMIC GaN Doherty. Large signal measurements, averaged over 16 MMICs, exhibited power gain of 10 dB, saturated output power in excess of 37 dBm (3 dB gain compression), together with drain efficiency of 47%, at 7 dB of output back-off, and higher than 35% in a 350 MHz band. Two-tone characterization has shown a carrier to 3rd order intermodulation ratio higher than 25 dB in the Doherty region.

Keywords

III-V semiconductors; MMIC amplifiers; gallium compounds; intermodulation; power amplifiers; semiconductor device models; wide band gap semiconductors; C-band point-to-point backhaul application; GaN; MMIC GaN doherty power amplifier; TriQuint technology; drain efficiency; frequency 350 MHz; frequency 7 GHz; gain 10 dB; gain 3 dB; intermodulation ratio; signal measurement; two-tone characterization; Frequency measurement; Gain; Gain measurement; Gallium nitride; MMICs; Power generation; Power measurement; Backhaul networks; Doherty power amplifier (DPA); gallium nitride; monolithic microwave integrated circuit (MMIC);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2012.2234090

Filename

6392223