Endurance Degradation in Metal Oxide-Based Resistive Memory Induced by Oxygen Ion Loss Effect

In this letter, new endurance degradation behaviors in the bipolar resistive random access memory devices with multilayered HfOx/TiOx are reported for the first time, showing almost a constant resistance in low resistance state and a gradually reduced resistance in high resistance state (HRS). Further investigations into the dependence of HRSs degradation speed on switching voltage and temperature reveal that the degradation is attributed to the oxygen ion (O^2-) loss effect during RESET process, which leads to the insufficient O^2- supply for recombining the oxygen vacancies. Possible technical solutions are then proposed to improve the endurance performance.