DocumentCode :
1765346
Title :
Effect of current density on silicon surface in electrochemical etching
Author :
Burham, Norhafizah ; Hamzah, Azrul Azlan ; Majlis, Burhanuddin Yeop
Author_Institution :
Inst. of Microeng. & Nanoelectron. (IMEN), Univ. Kebangsaan Malaysia (UKM), Bangi, Malaysia
Volume :
9
Issue :
12
fYear :
2014
fDate :
12 2014
Firstpage :
850
Lastpage :
853
Abstract :
A simple and reliable fabrication technique for producing nanoporous filters is presented. The nanoporous filter plays an important role in biomedical microelectromechanical systems applications, especially in filtering out waste and solute from inside human blood. Nanosized components in the biological fluid are filtered using silicon membranes that are controlled by nanosized pores. The technique explored was the electrochemical etching (ECE) process of silicon. This approach starts with thinning the bulk silicon until only several micrometres thick using the KOH process and then carry out ECE to produce pores. The yield of the process was a 3 μm thick nanoporous silicon membrane with pore sizes of less than 100 nm. This physical characteristic enables the membrane to filter all the waste and solute particles of less than 100 nm. Owing to this simple and reliable method, the development of nanoporous silicon membrane can be used in nanofiltration applications especially in an artificial kidney.
Keywords :
current density; electrochemistry; elemental semiconductors; etching; filters; membranes; nanoporous materials; porous semiconductors; silicon; KOH process; Si; artificial kidney; biological fluid; current density; electrochemical etching; nanofiltration; nanoporous filters; physical characteristic; silicon surface; size 3 mum; solute particles; thick nanoporous silicon membrane; waste;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2014.0382
Filename :
6992352
Link To Document :
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