Highly enhanced charge injection and bulk transport in organic gap-type diodes via one-pot treatment process: experiment and simulation

Author

Hyeok Kim ; Dong-Seok Song ; Seongmin Kim ; Battaglini, Nicolas ; Lang, Philippe ; Horowitz, Gilles ; Do-Kyung Kim ; In Man Kang ; Jin-Hyuk Bae

Author_Institution

ITODYS, Univ. Paris Diderot, Paris, France

Volume

9

Issue

12

fYear

2014

fDate

12 2014

Firstpage

887

Lastpage

890

Abstract

The gap-type diode is a basic component of organic field-effect transistors. In the critical voltage range above 10 V, the gap-type diode works in the same way as a sandwich-type diode adapted for organic light-emitting diodes and organic photovoltaic cells. However, the gap-type diode is rarely studied, and compact modelling is not often found in previous reports that deal with this type of an organic diode. Enhanced bulk transport is exhibited using the one-pot treatment of self-assembled monolayers (SAMs) for an SiO₂ surface and an Au contact metal in the gap-type organic diode. Charge-injection improvement via the SAM treatment on Au induces higher bulk transport. This phenomenon is analysed mainly through compact modelling.

Keywords

charge-coupled devices; field effect transistors; gold; organic compounds; silicon compounds; SAM treatment; SiO₂-Au; bulk transport; charge-injection improvement; critical voltage; enhanced bulk transport; gold contact metal; high bulk transport; high enhanced charge injection; one-pot treatment; one-pot treatment process; organic field-effect transistors; organic gap-type diodes; organic light-emitting diodes; organic photovoltaic cells; sandwich-type diode; self-assembled monolayers;

fLanguage

English

Journal_Title

Micro & Nano Letters, IET

Publisher

iet

ISSN

1750-0443

Type

jour

DOI

10.1049/mnl.2014.0422

Filename

6992354