Title :
Nanoscale rolled-up InAs quantum dot tube photodetector
Author :
Dastjerdi, M.H.T. ; Mi, Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Abstract :
The first demonstration of a rolled-up InAs quantum dot tube photodetector is reported, which is fabricated by the selective release of self-organised InAs/GaAs quantum dot heterostructures from the host substrate. The device exhibits a responsivity of ~66 mA/W and an external quantum efficiency of ~8% under 1064 nm excitation at 300 K.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; nanofabrication; nanosensors; photodetectors; semiconductor quantum dots; InAs-GaAs; host substrate; nanoscale rolled-up quantum dot tube photodetector; self-organised quantum dot heterostructures; size 1064 nm; temperature 30 K;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.4070
