DocumentCode :
1765501
Title :
Bottom-inlet-type micro-electro-mechanical system acoustic sensors based on two polyimide/amorphous-Si sacrificial layers
Author :
Jaewoo Lee ; Changhan Je ; Yi-Gyeong Kim ; Lee, Sung Q. ; Woo-Seok Yang ; Sang-Gug Lee
Author_Institution :
Nano Sensor Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Volume :
9
Issue :
12
fYear :
2014
fDate :
12 2014
Firstpage :
845
Lastpage :
849
Abstract :
A bottom-inlet-type micro-electro-mechanical system acoustic sensor based on two polyimide/a-Si sacrificial layers is presented. A diaphragm was adapted to be on the top side of the sacrificial layers, showing the bottom-inlet structure for the package, which has the sensitivity of more than 3 dB compared with that of the top-inlet type. Also, the fundamental CMOS process implemented with Al electrodes was applied to have simple releasing steps by O2 ashing and XeF2 isotropic etching because of their material etching selectivity. The sensor module had a sensitivity of -38.9 dBV/Pa at 1 kHz with a bias of 9.2 V in the sweep range from 100 Hz to 16 kHz. In addition, to evaluate the open-circuit sensitivity, structure-based equivalent circuit modelling was performed with lumped parameters. The modelled sensitivity was in good agreement with the measured sensitivity in the error rate of 4.3% under 8 kHz, demonstrating the validity of the modelling. The modelled open-circuit sensitivity was determined to be -37.2 dBV/Pa at 1 kHz using the proposed lumped model.
Keywords :
acoustic devices; diaphragms; equivalent circuits; etching; microsensors; silicon; acoustic sensors; bottom inlet type microelectromechanical system; diaphragm; frequency 100 Hz to 16 kHz; fundamental CMOS process; isotropic etching; open circuit sensitivity; polyimide-amorphous silicon sacrificial layers; structure based equivalent circuit modelling; voltage 9.2 V;
fLanguage :
English
Journal_Title :
Micro & Nano Letters, IET
Publisher :
iet
ISSN :
1750-0443
Type :
jour
DOI :
10.1049/mnl.2014.0381
Filename :
6992372
Link To Document :
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