DocumentCode :
1765504
Title :
Error Model Guided Joint Performance and Endurance Optimization for Flash Memory
Author :
Liang Shi ; Keni Qiu ; Mengying Zhao ; Xue, Chun Jason
Author_Institution :
Coll. of Comput. Sci., Chongqing Univ., Chongqing, China
Volume :
33
Issue :
3
fYear :
2014
fDate :
41699
Firstpage :
343
Lastpage :
355
Abstract :
As flash memory has better performance than hard disks, it has been widely applied in embedded systems, personal computers, and data centers as storage components. However, endurance and write performance are the two key challenges in the deployment of flash memory. In this paper, with the awareness of errors induced from write operations, endurance, and retention time, a stage-based optimization approach is proposed to improve the write performance and endurance at different usage stages of flash memory. A series of trace-driven simulations show that the proposed approach outperforms a set of state-of-the-art approaches in terms of write performance and lifetime.
Keywords :
circuit optimisation; error analysis; flash memories; endurance optimization; error model guided joint performance; flash memory; retention time; stage-based optimization approach; write operations; Ash; Flash memories; Interference; Joints; Measurement; Optimization; Programming; Endurance error; error model; retention error; smart refresh; stage optimization; write error;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2013.2288691
Filename :
6740049
Link To Document :
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