DocumentCode
1765614
Title
STI Crater Defect Reduction for Semiconductor Device Yield Improvement
Author
Li Liang ; Rao Xue Song ; Lu Wei ; Alex, Sam
Author_Institution
Adv. Module Technol. Div., Globalfoundries Singapore PTE Ltd., Singapore, Singapore
Volume
26
Issue
3
fYear
2013
fDate
Aug. 2013
Firstpage
335
Lastpage
338
Abstract
One type of yield killing defect called STI Crater is found on advanced CMOS devices during shallow trench isolation (STI) formation. The mechanism of the defect formation is discussed, and various cleaning and thermal treatment applications have been evaluated to eliminate the defects. We observe above 6% yield improvement with optimized cleaning process scheme.
Keywords
CMOS integrated circuits; integrated circuit yield; isolation technology; CMOS; STI crater; semiconductor device yield; shallow trench isolation crater defect reduction; thermal treatment; yield killing defect; STI crater; Shallow trench isolation (STI); high aspect ratio process (HARP); polymer removal; yield enhancement;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2013.2267545
Filename
6530709
Link To Document