Title :
STI Crater Defect Reduction for Semiconductor Device Yield Improvement
Author :
Li Liang ; Rao Xue Song ; Lu Wei ; Alex, Sam
Author_Institution :
Adv. Module Technol. Div., Globalfoundries Singapore PTE Ltd., Singapore, Singapore
Abstract :
One type of yield killing defect called STI Crater is found on advanced CMOS devices during shallow trench isolation (STI) formation. The mechanism of the defect formation is discussed, and various cleaning and thermal treatment applications have been evaluated to eliminate the defects. We observe above 6% yield improvement with optimized cleaning process scheme.
Keywords :
CMOS integrated circuits; integrated circuit yield; isolation technology; CMOS; STI crater; semiconductor device yield; shallow trench isolation crater defect reduction; thermal treatment; yield killing defect; STI crater; Shallow trench isolation (STI); high aspect ratio process (HARP); polymer removal; yield enhancement;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2013.2267545
