Title :
Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
Author :
Austin, Dustin Z. ; Allman, Derryl ; Price, David ; Hose, Sallie ; Conley, John F.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR, USA
Abstract :
Metal-insulator-insulator-metal (MIIM) capacitors with bilayers of Al2O3 and SiO2 are deposited at 200 °C via plasma enhanced atomic layer deposition. Employing the cancelling effect between the positive quadratic voltage coefficient of capacitance (αVCC) of Al2O3 and the negative αVCC of SiO2, devices are made that simultaneously meet the International Technology Roadmap for Semiconductors 2020 projections for capacitance density, leakage current density, and voltage nonlinearity. Optimized bilayer Al2O3/SiO2 MIIM capacitors exhibit a capacitance density of 10.1 fF/μm2, a leakage current density of 6.8 nA/cm2 at 1 V, and a minimized αVCC of -20 ppm/V2.
Keywords :
MIM devices; aluminium compounds; atomic layer deposition; capacitors; current density; silicon compounds; αVCC; Al2O3-SiO2; International Technology Roadmap for Semiconductors 2020; MIM capacitor; bilayer optimization; cancelling effect; capacitance density; leakage current density; metal-insulator-insulator-metal capacitor; plasma enhanced atomic layer deposition; positive quadratic voltage coefficient of capacitance; temperature 200 degC; voltage 1 V; voltage nonlinearity; Aluminum oxide; Capacitance; Electrodes; Films; Leakage currents; MIM capacitors; $alpha $ VCC; αVCC; Al2O3/SiO2; MIIM; MIMCAPs; PEALD; metal-insulator-metal capacitors; plasma enhanced atomic layer deposition; quadratic voltage coefficient of capacitance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2412685
