Complementary Resistive Switching in Flexible RRAM Devices

Author

Ya-Wei Dai ; Lin Chen ; Wen Yang ; Qing-Qing Sun ; Peng Zhou ; Peng-Fei Wang ; Shi-Jin Ding ; Zhang, David Wei ; Fei Xiao

Author_Institution

State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China

Volume

35

Issue

9

fYear

2014

fDate

Sept. 2014

Firstpage

915

Lastpage

917

Abstract

Complementary resistive switching (CRS) behavior in a flexible plastic substrate was studied for the first time in this letter. CRS behaviors in Al/Ni/NiAlOx/Al₂O_3-x/ITO device were demonstrated with excellent performance. A high-resistance ON/OFF ratio (~10³), 50-ms switch speed was successfully obtained. In addition, the mechanism of CRS behavior was interpreted by the redistribution of oxygen vacancies in NiAlO_x/Al₂O_3-x stack layers. Such a CRS style flexible RRAM device is a possible solution for future integrated circuits application.

Keywords

aluminium compounds; flexible electronics; indium compounds; nickel compounds; random-access storage; switching circuits; tin compounds; Al-Ni-NiAlO_x-Al₂O_3-x-ITO; CRS behavior; CRS style flexible RRAM devices; complementary resistive switching behavior; flexible plastic substrate; high-resistance ON-OFF ratio; oxygen vacancies redistribution; stack layers; time 50 ms; Aluminum oxide; Electron devices; Indium tin oxide; Nickel; Resistance; Substrates; Switches; CRS; atomic layer deposition (ALD); flexible resistive switching; flexible resistive switching.;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2334609

Filename

6861430