Modified T-Model With an Improved Parameter Extraction Method for Silicon-Based Spiral Inductors

A modified T-equivalent circuit with an improved parameter extraction method is proposed in this letter for silicon-based spiral inductors. Two extra R-L series networks are introduced into the conventional frequency independent T-model to modify its failure in describing the inductance drop-down in the low frequency band. Besides, a “peak- Q” method is proposed in order to improve the accuracy of the parameter extraction method. Finally, the physical properties underling the critical model parameters of Rp and Cox, which have ever been described qualitatively, are now demonstrated experimentally.