DocumentCode
1765889
Title
A 12% Efficient Silicon/PEDOT:PSS Heterojunction Solar Cell Fabricated at < 100 °C
Author
Nagamatsu, Ken A. ; Avasthi, Sushobhan ; Jhaveri, Janam ; Sturm, James C.
Author_Institution
Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
Volume
4
Issue
1
fYear
2014
fDate
Jan. 2014
Firstpage
260
Lastpage
264
Abstract
Solar cells based on a heterojunction between crystalline silicon and the organic polymer PEDOT:PSS were fabricated at temperatures <;100 °C by spin coating. The Si/PEDOT interface blocks electrons in n-type silicon from moving to the anode and functions as a low-temperature alternative to diffused p- n junctions. The device takes advantage of the light absorption and transport properties of silicon and combines it with the simplicity of fabrication afforded by organics. Reverse recovery measurements were used to analyze the electron-blocking effectiveness of the heterojunction. The data show that current in the device is primarily due to holes injected from the anode into the silicon. At AM1.5, Si/PEDOT heterojunction solar cells achieve power conversion efficiency of 11.7%, which is among the highest reported values for this class of devices.
Keywords
anodes; elemental semiconductors; p-n heterojunctions; polymer blends; silicon; solar cells; spin coating; Si; Si-PEDOT interface; anode; crystalline silicon; diffused p-n junctions; efficient silicon-PEDOT:PSS heterojunction solar cell; fabrication simplicity; heterojunction electron-blocking effectiveness; n-type silicon; organic polymer PEDOT:PSS; power conversion efficiency; reverse recovery measurements; silicon light absorption; silicon transport properties; spin coating; Current measurement; Dark current; Heterojunctions; Photovoltaic cells; Photovoltaic systems; Silicon; Heterojunction; PEDOT: PSS; hybrid photovoltaics; silicon organic;
fLanguage
English
Journal_Title
Photovoltaics, IEEE Journal of
Publisher
ieee
ISSN
2156-3381
Type
jour
DOI
10.1109/JPHOTOV.2013.2287758
Filename
6671382
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