• DocumentCode
    1765889
  • Title

    A 12% Efficient Silicon/PEDOT:PSS Heterojunction Solar Cell Fabricated at < 100 °C

  • Author

    Nagamatsu, Ken A. ; Avasthi, Sushobhan ; Jhaveri, Janam ; Sturm, James C.

  • Author_Institution
    Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
  • Volume
    4
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    260
  • Lastpage
    264
  • Abstract
    Solar cells based on a heterojunction between crystalline silicon and the organic polymer PEDOT:PSS were fabricated at temperatures <;100 °C by spin coating. The Si/PEDOT interface blocks electrons in n-type silicon from moving to the anode and functions as a low-temperature alternative to diffused p- n junctions. The device takes advantage of the light absorption and transport properties of silicon and combines it with the simplicity of fabrication afforded by organics. Reverse recovery measurements were used to analyze the electron-blocking effectiveness of the heterojunction. The data show that current in the device is primarily due to holes injected from the anode into the silicon. At AM1.5, Si/PEDOT heterojunction solar cells achieve power conversion efficiency of 11.7%, which is among the highest reported values for this class of devices.
  • Keywords
    anodes; elemental semiconductors; p-n heterojunctions; polymer blends; silicon; solar cells; spin coating; Si; Si-PEDOT interface; anode; crystalline silicon; diffused p-n junctions; efficient silicon-PEDOT:PSS heterojunction solar cell; fabrication simplicity; heterojunction electron-blocking effectiveness; n-type silicon; organic polymer PEDOT:PSS; power conversion efficiency; reverse recovery measurements; silicon light absorption; silicon transport properties; spin coating; Current measurement; Dark current; Heterojunctions; Photovoltaic cells; Photovoltaic systems; Silicon; Heterojunction; PEDOT: PSS; hybrid photovoltaics; silicon organic;
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2013.2287758
  • Filename
    6671382