DocumentCode :
1765972
Title :
Improved Performance in Mirror-Assisted Back-Contact CMOS Photovoltaic Devices
Author :
Yung-Jr Hung ; Jia-Fa Chen ; Chung-Lin Chun
Author_Institution :
Dept. of Photonics, Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan
Volume :
36
Issue :
5
fYear :
2015
fDate :
42125
Firstpage :
478
Lastpage :
480
Abstract :
Improved performance in CMOS interdigitated back-contact photovoltaic devices (IBC-PVs) is demonstrated by utilizing interdigitated junctions and a back metal reflector to simultaneously achieve large total junction area, uniform series resistance, and high optical back reflection. Enhanced ultimate efficiency of 20.33% is experimentally obtained from a 35-μm thick CMOS IBC-PV with a junction period of 7.2 μm under 980-nm illumination. Since the proposed IBC-PVs are implemented by standard bulk CMOS process, it can be easily integrated with other microelectronics to realize a self-power system for a variety of applications.
Keywords :
CMOS integrated circuits; solar cells; CMOS interdigitated back-contact photovoltaic devices; IBC-PV; back metal reflector; interdigitated junctions; microelectronics; mirror-assisted back-contact CMOS photovoltaic devices; optical back reflection; self-power system; uniform series resistance; CMOS integrated circuits; Junctions; Mirrors; Optical reflection; Photovoltaic systems; Silicon; Complementary metal-oxide-semiconductor (CMOS); complementary metal-oxide-semiconductor (CMOS); interdigitated back-contact photovoltaic device;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2411152
Filename :
7061460
Link To Document :
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