DocumentCode :
1766071
Title :
Design of four-state inverter using quantum dot gate-quantum dot channel field effect transistor
Author :
Karmakar, Sanjay
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Connecticut, Storrs, CT, USA
Volume :
49
Issue :
18
fYear :
2013
fDate :
August 29 2013
Firstpage :
1131
Lastpage :
1133
Abstract :
Quaternary logic can be implemented using quantum dot gate-quantum dot channel field effect transistors (QDG-QDCFETs) which produce four states in their transfer characteristics. A circuit model is used to simulate a four-state state inverter which is the basic building block of any multi-valued logic (MVL) circuit design. A basic problem of MVL implementation is the noise margin. The stable nature of the transfer characteristics of the QDG-QDCFET can make them a promising circuit element in future MVL circuit design. Comparison of fabricated device characteristics and the model data is shown.
Keywords :
field effect transistors; logic design; multivalued logic circuits; quantum dots; quantum gates; MVL circuit design; QDG-QDCFET; circuit model; fabricated device characteristics; four-state inverter design; model data; multivalued logic circuit design; noise margin; quantum dot gate-quantum dot channel field effect transistor; quaternary logic;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2013.0570
Filename :
6587639
Link To Document :
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