• DocumentCode
    1766071
  • Title

    Design of four-state inverter using quantum dot gate-quantum dot channel field effect transistor

  • Author

    Karmakar, Sanjay

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Connecticut, Storrs, CT, USA
  • Volume
    49
  • Issue
    18
  • fYear
    2013
  • fDate
    August 29 2013
  • Firstpage
    1131
  • Lastpage
    1133
  • Abstract
    Quaternary logic can be implemented using quantum dot gate-quantum dot channel field effect transistors (QDG-QDCFETs) which produce four states in their transfer characteristics. A circuit model is used to simulate a four-state state inverter which is the basic building block of any multi-valued logic (MVL) circuit design. A basic problem of MVL implementation is the noise margin. The stable nature of the transfer characteristics of the QDG-QDCFET can make them a promising circuit element in future MVL circuit design. Comparison of fabricated device characteristics and the model data is shown.
  • Keywords
    field effect transistors; logic design; multivalued logic circuits; quantum dots; quantum gates; MVL circuit design; QDG-QDCFET; circuit model; fabricated device characteristics; four-state inverter design; model data; multivalued logic circuit design; noise margin; quantum dot gate-quantum dot channel field effect transistor; quaternary logic;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2013.0570
  • Filename
    6587639